Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2)

Kunttal Keyshar; Yongji Gong; Gonglan Ye; Gustavo Brunetto; Wu Zhou; Daniel P Cole; Ken Hackenberg; Yongmin He; Leonardo Machado; Mohamad Kabbani; Amelia H C Hart; Bo Li; Douglas S Galvao; Antony George; Robert Vajtai; Chandra Sekhar Tiwary; Pulickel M Ajayan

doi:10.1002/adma.201501795

Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2)

Adv Mater. 2015 Aug 19;27(31):4640-8. doi: 10.1002/adma.201501795. Epub 2015 Jul 3.

Authors

Kunttal Keyshar¹, Yongji Gong², Gonglan Ye¹, Gustavo Brunetto³, Wu Zhou⁴, Daniel P Cole⁵, Ken Hackenberg¹, Yongmin He¹, Leonardo Machado³, Mohamad Kabbani¹, Amelia H C Hart¹, Bo Li¹, Douglas S Galvao³, Antony George¹, Robert Vajtai¹, Chandra Sekhar Tiwary¹, Pulickel M Ajayan¹

Affiliations

¹ Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA.
² Department of Chemistry, Rice University, Houston, TX, 77005, USA.
³ Applied Physics Department, State University of Campinas - UNICAMP, UNICAMP-IFGW-DFA, 13083-859, Campinas, SP, Brazil.
⁴ Materials Science and Technology Division, Oak Ridge National Lab, Oak Ridge, TN, 37831, USA.
⁵ U.S. Army Research Laboratory, Vehicle Technology Directorate, Aberdeen Proving Ground, MD, 21005, USA.

PMID: 26140355
DOI: 10.1002/adma.201501795

Abstract

The direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field-effect transistor characteristics are evaluated, which highlight the potential in being used as an n-type semiconductor.

Keywords: 2D materials; chemical vapor deposition; renium disulfide; transition metal dichalcogenides.