Enhanced performance of nitride-based ultraviolet vertical-injection light-emitting diodes by non-insulation current blocking layer and textured surface

Yen Chih Chiang; Bing Cheng Lin; Kuo Ju Chen; Chien Chung Lin; Po Tsung Lee; Hao Chung Kuo

doi:10.1186/1556-276X-9-699

Enhanced performance of nitride-based ultraviolet vertical-injection light-emitting diodes by non-insulation current blocking layer and textured surface

Nanoscale Res Lett. 2014 Dec;9(1):2417. doi: 10.1186/1556-276X-9-699. Epub 2014 Dec 29.

Authors

Yen Chih Chiang¹, Bing Cheng Lin, Kuo Ju Chen, Chien Chung Lin, Po Tsung Lee, Hao Chung Kuo

Affiliation

¹ Institute of Lighting and Energy Photonics, National Chiao Tung University, No.301, Gaofa 3rd Rd., Guiren Dist., Tainan City, 71150, Taiwan, yenchih.chiang@gmail.com.

Abstract

For the purpose of light extraction and efficiency enhancement, the nitride-based ultraviolet vertical-injection light-emitting diodes (UV-VLEDs) with non-insulation current blocking layer (n-CBL) and optimized textured surface were fabricated. The optical and electrical characteristics were investigated in this n-CBL UV-VLED. Furthermore, the efficiency of optimized structure was improved by 5 ~ 6 times compared to our reference.