Evidence for Flat Bands near the Fermi Level in Epitaxial Rhombohedral Multilayer Graphene

ACS Nano. 2015 May 26;9(5):5432-9. doi: 10.1021/acsnano.5b01239. Epub 2015 Apr 24.

Abstract

The stacking order of multilayer graphene has a profound influence on its electronic properties. In particular, it has been predicted that a rhombohedral stacking sequence displays a very flat conducting surface state: the longer the sequence, the flatter the band. In such a flat band, the role of electron-electron correlation is enhanced, possibly resulting in high Tc superconductivity, magnetic order, or charge density wave order. Here we demonstrate that rhombohedral multilayers are easily obtained by epitaxial growth on 3C-SiC(111) on a 2° off-axis 6H-SiC(0001). The resulting samples contain rhombohedral sequences of five layers on 70% of the surface. We confirm the presence of the flat band at the Fermi level by scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy, in close agreement with the predictions of density functional theory calculations.

Keywords: STEM; STM/STS; angle-resolved photoemission spectroscopy; density functional theory; flat band; rhombohedral multilayer graphene.

Publication types

  • Research Support, Non-U.S. Gov't