Positronics of subnanometer atomistic imperfections in solids as a high-informative structure characterization tool

Nanoscale Res Lett. 2015 Feb 19:10:77. doi: 10.1186/s11671-015-0764-z. eCollection 2015.

Abstract

Methodological possibilities of positron annihilation lifetime (PAL) spectroscopy applied to characterize different types of nanomaterials treated within three-term fitting procedure are critically reconsidered. In contrast to conventional three-term analysis based on admixed positron- and positronium-trapping modes, the process of nanostructurization is considered as substitutional positron-positronium trapping within the same host matrix. Developed formalism allows estimate interfacial void volumes responsible for positron trapping and characteristic bulk positron lifetimes in nanoparticle-affected inhomogeneous media. This algorithm was well justified at the example of thermally induced nanostructurization occurring in 80GeSe2-20Ga2Se3 glass.

Keywords: Nanomaterials; Positron annihilation lifetime; Positronics; Subatomic void; Trapping.