Graphene/Si-quantum-dot heterojunction diodes showing high photosensitivity compatible with quantum confinement effect

Adv Mater. 2015 Apr 24;27(16):2614-20. doi: 10.1002/adma.201500040. Epub 2015 Mar 16.

Abstract

Graphene/Si quantum dot (QD) heterojunction diodes are reported for the first time. The photoresponse, very sensitive to variations in the size of the QDs as well as in the doping concentration of graphene and consistent with the quantum-confinement effect, is remarkably enhanced in the near-ultraviolet range compared to commercially available bulk-Si photodetectors. The photoresponse proves to be dominated by the carriertunneling mechanism.

Keywords: Si quantum dots; graphene; heterojunction diodes; photodetectors; quantum confinement effect.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Electrical Equipment and Supplies*
  • Electrons
  • Graphite / chemistry*
  • Hydrophobic and Hydrophilic Interactions
  • Lasers
  • Microscopy, Electron, Transmission
  • Nanowires / chemistry*
  • Photochemical Processes
  • Photons
  • Quantum Dots / chemistry*
  • Quantum Theory
  • Silicon / chemistry*
  • Silicon Dioxide / chemistry
  • Ultraviolet Rays

Substances

  • Silicon Dioxide
  • Graphite
  • Silicon