Low-voltage flexible organic electronics based on high-performance sol-gel titanium dioxide dielectric

Sujin Sung; Sungjun Park; Won-June Lee; Jongho Son; Chang-Hyun Kim; Yoonhee Kim; Do Young Noh; Myung-Han Yoon

doi:10.1021/acsami.5b00281

Low-voltage flexible organic electronics based on high-performance sol-gel titanium dioxide dielectric

ACS Appl Mater Interfaces. 2015 Apr 15;7(14):7456-61. doi: 10.1021/acsami.5b00281. Epub 2015 Apr 1.

Authors

Sujin Sung¹, Sungjun Park¹, Won-June Lee¹, Jongho Son¹, Chang-Hyun Kim¹, Yoonhee Kim¹, Do Young Noh¹, Myung-Han Yoon¹

Affiliation

¹ †School of Materials Science and Engineering and ‡Research Institute for Solar and Sustainable Energies, §Department of Physics and Photon Science, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea.

PMID: 25751669
DOI: 10.1021/acsami.5b00281

Abstract

In this letter, we report that high-performance insulating films can be generated by judicious control over the microstructure of sol-gel-processed titanium dioxide (TiO2) films, typically known as wide-bandgap semiconductors. The resultant device made of 23 nm-thick TiO2 dielectric layer exhibits a low leakage current density of ∼1 × 10(-7) A cm(-2) at 2 V and a large areal capacitance of 560 nF cm(-2) with the corresponding dielectric constant of 27. Finally, low-voltage flexible organic thin-film transistors were successfully demonstrated by incorporating this versatile solution-processed oxide dielectric material into pentacene transistors on polyimide substrates.

Keywords: gate dielectric; low-voltage; organic thin-film transistor; sol−gel; titanium dioxide.

Publication types

Research Support, Non-U.S. Gov't