Developing rationally controlled bottom-up device fabrication processes is essential for the achievement of high performance optimal devices. We report a controlled, seedless and site-selective hydrothermal technique to fabricate high-performance nanostructured ZnO UV-detectors directly on-chip. We demonstrate that by controlling the nanowire growth process, via tuning the experimental parameters such as the concentration of reactants and the growth time, and by introducing a refresh of the growth solution, the device structure efficiency can be enhanced to significantly improve its performance. The on-chip fabricated bridging nanosyringe ultraviolet detector demonstrates improved sensitivity (~10(5)), nanowatts detectability, and ultrafast response-time (90 ms) and recovery-time (210 ms). The improvement in response-time and recovery-time is attributed to the unique nanowire-nanowire junction barrier dominated resistance and the direct contact between ZnO and Au electrodes. Furthermore, the enhanced sensitivity and nanowatts detectability of the bridging nanosyringe device are due to the reduction in dimensionality and ultrahigh surface-to-volume ratio. This work paves the way toward low cost, large scale, low temperature, seedless and site-selective fabrication of high performance ZnO nanowire sensors on flexible and transparent substrates.