Correlation of electrical and structural properties of single as-grown GaAs nanowires on Si (111) substrates

Nano Lett. 2015 Feb 11;15(2):981-9. doi: 10.1021/nl5037879. Epub 2015 Jan 29.

Abstract

We present the results of the study of the correlation between the electrical and structural properties of individual GaAs nanowires measured in their as-grown geometry. The resistance and the effective charge carrier mobility were extracted for several nanowires, and subsequently, the same nano-objects were investigated using X-ray nanodiffraction. This revealed a number of perfectly stacked zincblende and twinned zincblende units separated by axial interfaces. Our results suggest a correlation between the electrical parameters and the number of intrinsic interfaces.

Keywords: X-ray nanodiffraction; axial interfaces; correlation; electrical characterization; plastic deformation; single GaAs nanowires.

Publication types

  • Research Support, Non-U.S. Gov't