Polarized single photon emission and photon bunching from an InGaN quantum dot on a GaN micropyramid

Nanotechnology. 2015 Feb 13;26(6):065702. doi: 10.1088/0957-4484/26/6/065702. Epub 2015 Jan 19.

Abstract

We report on excitonic single photon emission and biexcitonic photon bunching from an InGaN quantum dot formed on the apex of a hexagonal GaN micropyramid. An approach to suppress uncorrelated emission from the pyramid base is proposed, a metal film is demonstrated to effectively screen background emission and thereby significantly enhance the signal-to-background ratio of the quantum dot emission. As a result, the second order coherence function at zero time delay g(2)(0) is significantly reduced (to g(2)(0) = 0.24, raw value) for the excitonic autocorrelation at a temperature of 12 K under continuous wave excitation, and a dominating single photon emission is demonstrated to survive up to 50 K. The deterioration of the g(2)(0)-value at elevated temperatures is well understood as the combined effect of reduced signal-to-background ratio and limited time resolution of the setup. This result underlines the great potential of site-controlled pyramidal dots as sources of fast polarized single photons.

Publication types

  • Research Support, Non-U.S. Gov't