Field effect transistors with current saturation and voltage gain in ultrathin ReS2

Chris M Corbet; Connor McClellan; Amritesh Rai; Sushant Sudam Sonde; Emanuel Tutuc; Sanjay K Banerjee

doi:10.1021/nn505354a

Field effect transistors with current saturation and voltage gain in ultrathin ReS2

ACS Nano. 2015 Jan 27;9(1):363-70. doi: 10.1021/nn505354a. Epub 2014 Dec 24.

Authors

Chris M Corbet¹, Connor McClellan, Amritesh Rai, Sushant Sudam Sonde, Emanuel Tutuc, Sanjay K Banerjee

Affiliation

¹ Department of Electrical Engineering, The University of Texas at Austin , Austin, Texas 78712, United States.

PMID: 25514177
DOI: 10.1021/nn505354a

Abstract

We report the fabrication and device characteristics of exfoliated, few-layer, dual-gated ReS2 field effect transistors (FETs). The ReS2 FETs display n-type behavior with a room temperature Ion/I(off) of 10(5). Many devices were studied with a maximum intrinsic mobility of 12 cm(2) · V(-1) · s(-1) at room temperature and 26 cm(2) · V(-1) · s(-1) at 77 K. The Cr/Au-ReS2 contact resistance determined using the transfer length method is gate-bias dependent and ranges from 175 kΩ · μm to 5 kΩ · μm, and shows an exponential dependence on back-gate voltage indicating Schottky barriers at the source and drain contacts. Dual-gated ReS2 FETs demonstrate current saturation, voltage gain, and a subthreshold swing of 148 mV/decade.

Keywords: TMD; gain; mobility; rhenium disulfide; saturation; transistor.

Publication types

Research Support, Non-U.S. Gov't