Electroluminescence of ordered ZnO nanorod array/p-GaN light-emitting diodes with graphene current spreading layer

Jing-Jing Dong; Hui-Ying Hao; Jie Xing; Zhen-Jun Fan; Zi-Li Zhang

doi:10.1186/1556-276X-9-630

Electroluminescence of ordered ZnO nanorod array/p-GaN light-emitting diodes with graphene current spreading layer

Nanoscale Res Lett. 2014 Nov 25;9(1):630. doi: 10.1186/1556-276X-9-630. eCollection 2014.

Authors

Jing-Jing Dong¹, Hui-Ying Hao¹, Jie Xing¹, Zhen-Jun Fan¹, Zi-Li Zhang¹

Affiliation

¹ School of Science, China University of Geosciences (Beijing), 29 Xue Yuan Road, Haidian District, Beijing, 100083, China.

Abstract

Ordered ZnO nanorod array/p-GaN heterojunction light-emitting diodes (LEDs) have been fabricated by introducing graphene as the current spreading layer, which exhibit improved electroluminescence performance by comparison to the LED using a conventional structure (indium-tin-oxide as the current spreading layer). In addition, by adjusting the diameter of ZnO nanorod array in use, the light emission of the ZnO nanorod array/p-GaN heterojunction LEDs was enhanced further. This work has great potential applications in solid-state lighting, high performance optoelectronic devices, and so on.

Pacs: 78.60.Fi; 85.60.Jb; 78.67.Lt; 81.10.Dn.

Keywords: Graphene; Light-emitting diodes; Nanorod array; Zinc oxide.