Structurally engineered stackable and scalable 3D titanium-oxide switching devices for high-density nanoscale memory

Daeseok Lee; Jaesung Park; Jaehyuk Park; Jiyong Woo; Euijun Cha; Sangheon Lee; Kibong Moon; Jeonghwan Song; Yunmo Koo; Hyunsang Hwang

doi:10.1002/adma.201403675

Structurally engineered stackable and scalable 3D titanium-oxide switching devices for high-density nanoscale memory

Adv Mater. 2015 Jan 7;27(1):59-64. doi: 10.1002/adma.201403675. Epub 2014 Nov 6.

Authors

Daeseok Lee¹, Jaesung Park, Jaehyuk Park, Jiyong Woo, Euijun Cha, Sangheon Lee, Kibong Moon, Jeonghwan Song, Yunmo Koo, Hyunsang Hwang

Affiliation

¹ Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 790-784, Republic of Korea.

PMID: 25377127
DOI: 10.1002/adma.201403675

Abstract

A 3D high-density switching device is realized utilizing titanium oxide, which is the most optimum material, but which is not practically demonstrated yet. The 1S1R (one ReRAM with the developed switching device) exhibits memory characteristics with a significantly suppressed sneak current, which can be used to realize high-density ReRAM applications.

Keywords: 3D structure; cross-point array; metal-insulator transition; non-volatilememory; titanium oxide; two-terminal switch.