Organic semiconductors are key building blocks for future electronic devices that require unprecedented properties of low-weight, flexibility, and portability. However, the low charge-carrier mobility and undesirable processing conditions limit their compatibility with low-cost, flexible, and printable electronics. Here, we present significantly enhanced field-effect mobility (μ(FET)) in semiconducting polymers mixed with boron-doped carbon nanotubes (B-CNTs). In contrast to undoped CNTs, which tend to form undesired aggregates, the B-CNTs exhibit an excellent dispersion in conjugated polymer matrices and improve the charge transport between polymer chains. Consequently, the B-CNT-mixed semiconducting polymers enable the fabrication of high-performance FETs on plastic substrates via a solution process; the μFET of the resulting FETs reaches 7.2 cm(2) V(-1) s(-1), which is the highest value reported for a flexible FET based on a semiconducting polymer. Our approach is applicable to various semiconducting polymers without any additional undesirable processing treatments, indicating its versatility, universality, and potential for high-performance printable electronics.
Keywords: Semiconducting polymer; carbon nanotube; field-effect transistor; nanocomposite; polymer nanocrystallite; room-temperature process.