Q-switched mode-locked erbium-doped fiber laser based on topological insulator Bi(2)Se(3) deposited fiber taper

Appl Opt. 2014 Aug 10;53(23):5117-22. doi: 10.1364/AO.53.005117.

Abstract

We have demonstrated the passive Q-switching mode-locking operation in an erbium-doped fiber (EDF) laser by using topological insulator Bi(2)Se(3) deposited on fiber taper, whose damage threshold can be further increased by the large evanescent field interacting length. Due to the low saturation intensity, stable Q-switched mode-locked fiber lasers centered at 1562 nm can be generated at a pump power of 10 mW. The temporal and spectral characteristics for different pump strengths have also been investigated. To the best of our knowledge, it is the first time a Q-switched mode-locked EDF laser based on the fiber taper deposited by Bi(2)Se(3) was generated.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Bismuth / chemistry*
  • Energy Transfer
  • Equipment Design
  • Equipment Failure Analysis
  • Erbium / chemistry*
  • Fiber Optic Technology / instrumentation*
  • Lasers, Solid-State*
  • Selenium / chemistry*
  • Spectrum Analysis, Raman / instrumentation*

Substances

  • Erbium
  • Selenium
  • Bismuth