Vibrational, electronic and structural properties of wurtzite GaAs nanowires under hydrostatic pressure

Wei Zhou; Xiao-Jia Chen; Jian-Bo Zhang; Xin-Hua Li; Yu-Qi Wang; Alexander F Goncharov

doi:10.1038/srep06472

Vibrational, electronic and structural properties of wurtzite GaAs nanowires under hydrostatic pressure

Sci Rep. 2014 Sep 25:4:6472. doi: 10.1038/srep06472.

Authors

Wei Zhou¹, Xiao-Jia Chen², Jian-Bo Zhang³, Xin-Hua Li¹, Yu-Qi Wang¹, Alexander F Goncharov⁴

Affiliations

¹ Key Laboratory of Materials Physics and Center for Energy Matter in Extreme Environments, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China.
² 1] Key Laboratory of Materials Physics and Center for Energy Matter in Extreme Environments, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China [2] Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China.
³ Department of Physics, South China University of Technology, Guangzhou 510640, China.
⁴ 1] Key Laboratory of Materials Physics and Center for Energy Matter in Extreme Environments, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China [2] Geophysical Laboratory, Carnegie Institution of Washington, Washington D.C. 20015, U.S.A.

Abstract

The structural, vibrational, and electronic properties of GaAs nanowires have been studied in the metastable wurtzite phase via Resonant Raman spectroscopy and synchrotron X-ray diffraction measurements in diamond anvil cells under hydrostatic conditions between 0 and 23 GPa. The direct band gap E0 and the crystal field split-off gap E0 + Δ of wurtzite GaAs increase with pressure and their values become close to those of zinc-blende GaAs at 5 GPa, while being reported slightly larger at lower pressures. Above 21 GPa, a complete structural transition from the wurtzite to an orthorhombic phase is observed in both Raman and X-ray diffraction experiments.

Publication types

Research Support, U.S. Gov't, Non-P.H.S.