Volatilize-controlled oriented growth of the single-crystal layer for organic field-effect transistors

Haoyan Zhao; Dong Li; Guifang Dong; Lian Duan; Xiaohui Liu; Liduo Wang

doi:10.1021/la503481r

Volatilize-controlled oriented growth of the single-crystal layer for organic field-effect transistors

Langmuir. 2014 Oct 14;30(40):12082-8. doi: 10.1021/la503481r. Epub 2014 Oct 1.

Authors

Haoyan Zhao¹, Dong Li, Guifang Dong, Lian Duan, Xiaohui Liu, Liduo Wang

Affiliation

¹ Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University , Beijing 100084, People's Republic of China.

PMID: 25227560
DOI: 10.1021/la503481r

Abstract

We demonstrate a solution method of volatilize-controlled oriented growth (VOG) to fabricate aligned single crystals of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) on a Si/SiO2 substrate. Through controlling the evaporation rate of the solvent, large-area-aligned single-crystal layers can be achieved on several substrates at the same time, covering over 90% on 2 × 1 cm substrates. The method provides a low-cost, maneuverable technology, which has potential to be used in batch production. We find that the atmosphere of the solvent with high dissolving capacity is in favor of aligned single-crystal growth. Besides, the growth mechanism of the VOG method is investigated in this paper. Top-contact organic field-effect transistors based on the single crystals of TIPS pentacene are achieved on a Si/SiO2 substrate. The optimal device exhibits a field-effect mobility of 0.42 cm(2) V(-1) s(-1) and an on/off current ratio of 10(5). Our research indicates that the VOG method is promising in single-crystal growth on a Si/SiO2 substrate for commercial production.