Low carrier density epitaxial graphene devices on SiC

Yanfei Yang; Lung-I Huang; Yasuhiro Fukuyama; Fan-Hung Liu; Mariano A Real; Paola Barbara; Chi-Te Liang; David B Newell; Randolph E Elmquist

doi:10.1002/smll.201400989

Low carrier density epitaxial graphene devices on SiC

Small. 2015 Jan 7;11(1):90-5. doi: 10.1002/smll.201400989. Epub 2014 Aug 18.

Authors

Yanfei Yang¹, Lung-I Huang, Yasuhiro Fukuyama, Fan-Hung Liu, Mariano A Real, Paola Barbara, Chi-Te Liang, David B Newell, Randolph E Elmquist

Affiliation

¹ National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899-8171; Department of Physics, Georgetown University, Washington, DC, 20057-1228.

PMID: 25136792
DOI: 10.1002/smll.201400989

Abstract

The transport characteristics of graphene devices with low n- or p-type carrier density (∼10(10) -10(11) cm(-2) ), fabricated using a new process that results in minimal organic surface residues, are reported. The p-type molecular doping responsible for the low carrier densities is initiated by aqua regia. The resulting devices exhibit highly developed ν = 2 quantized Hall resistance plateaus at magnetic field strengths of less than 4 T.

Keywords: aqua regia; carrier density; epitaxial graphene; quantum Hall plateau.

Publication types

Research Support, U.S. Gov't, Non-P.H.S.