Enhancement of ferroelectric Curie temperature in BaTiO3 films via strain-induced defect dipole alignment

Anoop R Damodaran; Eric Breckenfeld; Zuhuang Chen; Sungki Lee; Lane W Martin

doi:10.1002/adma.201400254

Enhancement of ferroelectric Curie temperature in BaTiO3 films via strain-induced defect dipole alignment

Adv Mater. 2014 Sep;26(36):6341-7. doi: 10.1002/adma.201400254. Epub 2014 Aug 5.

Authors

Anoop R Damodaran¹, Eric Breckenfeld, Zuhuang Chen, Sungki Lee, Lane W Martin

Affiliation

¹ Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL, 61801, USA; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA.

PMID: 25099557
DOI: 10.1002/adma.201400254

Abstract

The combination of epitaxial strain and defect engineering facilitates the tuning of the transition temperature of BaTiO3 to >800 °C. Advances in thin-film deposition enable the utilization of both the electric and elastic dipoles of defects to extend the epitaxial strain to new levels, inducing unprecedented functionality and temperature stability in ferroelectrics.

Keywords: BaTiO3; defects; epitaxy; ferroelectric; thin film.

Publication types

Research Support, U.S. Gov't, Non-P.H.S.