Homoepitaxial growth of highly ordered and pure layers of rutile on rutile crystal substrates and anatase on anatase crystal substrates using atomic layer deposition (ALD) is reported. The epilayers grow in a layer-by-layer fashion at low deposition temperatures but are still not well ordered on rutile. Subsequent annealing at higher temperatures produces highly ordered, terraced rutile surfaces that in many cases have fewer electrically active defects than the substrate crystal. The anatase epitaxial layers, grown at 250 °C, have much fewer electrically active defects than the rather impure bulk crystals. Annealing the epilayers at higher temperatures increased band gap photocurrents in both anatase and rutile.