Mode imaging and loss evaluation of semiconductor waveguides

Toshimitsu Mochizuki; Changsu Kim; Masahiro Yoshita; Takahiro Nakamura; Hidefumi Akiyama; Loren N Pfeiffer; Ken W West

doi:10.1063/1.4879335

Mode imaging and loss evaluation of semiconductor waveguides

Rev Sci Instrum. 2014 May;85(5):053109. doi: 10.1063/1.4879335.

Authors

Toshimitsu Mochizuki¹, Changsu Kim¹, Masahiro Yoshita¹, Takahiro Nakamura¹, Hidefumi Akiyama¹, Loren N Pfeiffer², Ken W West²

Affiliations

¹ Institute for Solid State Physics, The University of Tokyo, Kashiwanoha 5-1-5, Kashiwa, Chiba, Japan.
² Department of Electrical Engineering, Princeton University, New Jersey 08544, USA.

PMID: 24880355
DOI: 10.1063/1.4879335

Abstract

An imaging and loss evaluation method for semiconductor waveguides coupled with non-doped quantum wells is presented. Using the internal emission of the wells as a probe light source, the numbers and widths of the modes of waveguides with various ridge sizes were evaluated by CCD imaging, and the obtained values were consistent with effective index method calculation. Waveguide internal losses were obtained from analyses of the Fabry-Pérot fringes of waveguide emission spectra. We quantified the quality of 29 single-mode waveguide samples as an internal loss and variation of 10.2 ± 0.6 cm(-1).