Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways

Adv Mater. 2014 Jul 2;26(25):4273-8. doi: 10.1002/adma.201400529. Epub 2014 Apr 17.

Authors

You Seung Rim¹, Huajun Chen, Xiaolu Kou, Hsin-Sheng Duan, Huanping Zhou, Min Cai, Hyun Jae Kim, Yang Yang

Affiliation

¹ Department of Materials Science and Engineering, University of California Los Angeles, CA, 90095, USA.

PMID: 24740439
DOI: 10.1002/adma.201400529

No abstract available

Keywords: oxide semiconductor; solution-process; structural properties; thin-film transistor.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.