Spectroscopic proof of the correlation between redox-state and charge-carrier transport at the interface of resistively switching Ti/PCMO devices

Anja Herpers; Christian Lenser; Chanwoo Park; Francesco Offi; Francesco Borgatti; Giancarlo Panaccione; Stephan Menzel; Rainer Waser; Regina Dittmann

doi:10.1002/adma.201304054

Spectroscopic proof of the correlation between redox-state and charge-carrier transport at the interface of resistively switching Ti/PCMO devices

Adv Mater. 2014 May;26(17):2730-5. doi: 10.1002/adma.201304054. Epub 2014 Apr 6.

Authors

Anja Herpers¹, Christian Lenser, Chanwoo Park, Francesco Offi, Francesco Borgatti, Giancarlo Panaccione, Stephan Menzel, Rainer Waser, Regina Dittmann

Affiliation

¹ Peter Grünberg Institute, Research Center Jülich, 52425, Germany.

PMID: 24706476
DOI: 10.1002/adma.201304054

Abstract

By using hard X-ray photoelectron spectroscopy experimentally, proof is provided that resistive switching in Ti/Pr₀.₄₈ Ca₀.₅₂ MnO₃ (PCMO) devices is based on a redox-process that mainly occurs on the Ti-side. The different resistance states are determined by the amount of fully oxidized Ti-ions in the stack, implying a reversible redox-reaction at the interface, which governs the formation and shortening of an insulating tunnel barrier.

Keywords: HAXPES; PCMO; RRAM; redox-reaction; resistive switching.

Publication types

Research Support, Non-U.S. Gov't