Record high electron mobility of 6.3 cm² V⁻¹ s⁻¹ achieved for polymer semiconductors using a new building block

Bin Sun; Wei Hong; Zhuangqing Yan; Hany Aziz; Yuning Li

doi:10.1002/adma.201305981

Record high electron mobility of 6.3 cm² V⁻¹ s⁻¹ achieved for polymer semiconductors using a new building block

Adv Mater. 2014 May;26(17):2636-42, 2613. doi: 10.1002/adma.201305981. Epub 2014 Mar 13.

Authors

Bin Sun¹, Wei Hong, Zhuangqing Yan, Hany Aziz, Yuning Li

Affiliation

¹ Department of Chemical Engineering, Waterloo Institute for Nanotechnology (WIN), Waterloo, ON, N2L 3G1, Canada.

PMID: 24623497
DOI: 10.1002/adma.201305981

Abstract

A new electron acceptor building block, 3,6-di(pyridin-2-yl)pyrrolo[3,4-c ]pyrrole-1,4(2H ,5H)-dione (DBPy), is used to construct a donor-acceptor polymer, PDBPyBT. This polymer exhibits a strong self-assembly capability, to form highly crystalline and oriented thin films with a short π-π stacking distance of 0.36 nm. PDBPyBT shows ambipolar charge-transport performance in organic thin-film transistors, reaching a record high electron-mobility value of 6.30 cm(2) V(-1) s(-1).

Keywords: ambipolar charge transport; electron acceptor; electron mobility; organic thin film transistors; polymer semiconductor.

Publication types

Research Support, Non-U.S. Gov't