Direct solvothermal synthesis of B/N-doped graphene

Sun-Min Jung; Eun Kwang Lee; Min Choi; Dongbin Shin; In-Yup Jeon; Jeong-Min Seo; Hu Young Jeong; Noejung Park; Joon Hak Oh; Jong-Beom Baek

doi:10.1002/anie.201310260

Direct solvothermal synthesis of B/N-doped graphene

Angew Chem Int Ed Engl. 2014 Feb 24;53(9):2398-401. doi: 10.1002/anie.201310260.

Authors

Sun-Min Jung¹, Eun Kwang Lee, Min Choi, Dongbin Shin, In-Yup Jeon, Jeong-Min Seo, Hu Young Jeong, Noejung Park, Joon Hak Oh, Jong-Beom Baek

Affiliation

¹ Interdisciplinary School of Green Energy/Low-Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 689-798 (South Korea) http://jbbaek.unist.ac.kr.

PMID: 24574032
DOI: 10.1002/anie.201310260

Abstract

Heteroatom-doping into graphitic networks has been utilized for opening the band gap of graphene. However, boron-doping into the graphitic framework is extremely limited, whereas nitrogen-doping is relatively feasible. Herein, boron/nitrogen co-doped graphene (BCN-graphene) is directly synthesized from the reaction of CCl4 , BBr3 , and N2 in the presence of potassium. The resultant BCN-graphene has boron and nitrogen contents of 2.38 and 2.66 atom %, respectively, and displays good dispersion stability in N-methyl-2-pyrrolidone, allowing for solution casting fabrication of a field-effect transistor. The device displays an on/off ratio of 10.7 with an optical band gap of 3.3 eV. Considering the scalability of the production method and the benefits of solution processability, BCN-graphene has high potential for many practical applications.

Keywords: boron; doping; field effect transistors; graphene; nitrogen.