Efficient room-temperature near-infrared detection with solution-processed networked single wall carbon nanotube field effect transistors

Abstract

Efficient room temperature NIR detection with sufficient current gain is made with a solution-processed networked SWNT FET. The high performance NIR-FET with significantly enhanced photocurrent by more than two orders of magnitude compared to dark current in the depleted state is attributed to multiple Schottky barriers in the network, each of which absorb NIR and effectively separate photocarriers to corresponding electrodes.

Keywords: Near IR detection; Schottky barriers; field effect transistor detector; networked single wall carbon nanotubes; solution-processed carbon nanotube film.