High Q SiC microresonators

Opt Express. 2013 Jul 15;21(14):16882-7. doi: 10.1364/OE.21.016882.

Abstract

We demonstrate photonic devices based on standard 3C SiC epitaxially grown on silicon. We achieve high optical confinement by taking advantage of the high stiffness of SiC and undercutting the underlying silicon substrate. We demonstrate a 20 μm radius suspended microring resonator with Q=14,100 fabricated on commercially available SiC-on-silicon substrates.

Publication types

  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Carbon Compounds, Inorganic / chemistry*
  • Equipment Design
  • Equipment Failure Analysis
  • Micro-Electrical-Mechanical Systems / instrumentation*
  • Miniaturization
  • Silicon Compounds / chemistry*
  • Surface Plasmon Resonance / instrumentation*
  • Transducers*

Substances

  • Carbon Compounds, Inorganic
  • Silicon Compounds
  • silicon carbide