Note: high sensitivity self-bias magnetoelectric sensor with two different magnetostrictive materials

Lei Chen; Ping Li; Yumei Wen; Yong Zhu

doi:10.1063/1.4808322

Note: high sensitivity self-bias magnetoelectric sensor with two different magnetostrictive materials

Rev Sci Instrum. 2013 Jun;84(6):066101. doi: 10.1063/1.4808322.

Authors

Lei Chen¹, Ping Li, Yumei Wen, Yong Zhu

Affiliation

¹ Research Center of Sensors and Instruments, College of Optoelectronic Engineering, Chongqing University, Chongqing City 400044, People's Republic of China.

PMID: 23822388
DOI: 10.1063/1.4808322

Abstract

The self-bias magnetoelectric (ME) sensor is designed, fabricated, and characterized for detecting weak ac magnetic-field. The two different magnetostrictive materials produce the gradient of magnetization, resulting in an internal magnetic field and a strong ME response. At zero-biased dc magnetic field, a low-frequency ME voltage coefficient (dVME∕dHac) of 22.11 mV∕Oe is achieved, which is 17.69 times higher than that of the previous magnets∕0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) sensor. Furthermore, the ME voltage coefficient reaches 2.73 V∕Oe at resonance. The induced ME voltage shows an excellent linear relationship to ac magnetic field when field amplitude varies from ~10(-7) Oe to 1 Oe.