UV-visible spectroscopic analysis of electrical properties in alkali metal-doped amorphous zinc tin oxide thin-film transistors

Keon-Hee Lim; Kyongjun Kim; Seonjo Kim; Si Yun Park; Hyungjun Kim; Youn Sang Kim

doi:10.1002/adma.201204236

UV-visible spectroscopic analysis of electrical properties in alkali metal-doped amorphous zinc tin oxide thin-film transistors

Adv Mater. 2013 Jun 4;25(21):2994-3000. doi: 10.1002/adma.201204236. Epub 2013 Apr 25.

Authors

Keon-Hee Lim¹, Kyongjun Kim, Seonjo Kim, Si Yun Park, Hyungjun Kim, Youn Sang Kim

Affiliation

¹ Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-744, Republic of Korea.

PMID: 23616138
DOI: 10.1002/adma.201204236

Abstract

Solution-processed and alkali metals, such as Li and Na, are introduced in doped amorphous zinc tin oxide (ZTO) semiconductor TFTs, which show better electrical performance, such as improved field effect mobility, than intrinsic amorphous ZTO semiconductor TFTs. Furthermore, by using spectroscopic UV-visible analysis we propose a comprehensive technique for monitoring the improved electrical performance induced by alkali metal doping in terms of the change in optical properties. The change in the optical bandgap supported by the Burstein-Moss theory could successfully show a mobility increase that is related to interstitial doping of alkali metal in ZTO semiconductors.

Keywords: Zinc tin oxide semiconductor; alkali metal; burstein-moss effect; interstitial doping; thin film transistor.