Tuning the Dirac point in CVD-grown graphene through solution processed n-type doping with 2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazole

Peng Wei; Nan Liu; Hye Ryoung Lee; Eric Adijanto; Lijie Ci; Benjamin D Naab; Jian Qiang Zhong; Jinseong Park; Wei Chen; Yi Cui; Zhenan Bao

doi:10.1021/nl303410g

Tuning the Dirac point in CVD-grown graphene through solution processed n-type doping with 2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazole

Nano Lett. 2013 May 8;13(5):1890-7. doi: 10.1021/nl303410g. Epub 2013 Apr 5.

Authors

Peng Wei¹, Nan Liu, Hye Ryoung Lee, Eric Adijanto, Lijie Ci, Benjamin D Naab, Jian Qiang Zhong, Jinseong Park, Wei Chen, Yi Cui, Zhenan Bao

Affiliation

¹ Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.

PMID: 23537351
DOI: 10.1021/nl303410g

Abstract

Controlling the Dirac point of graphene is essential for complementary circuits. Here, we describe the use of 2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazole (o-MeO-DMBI) as a strong n-type dopant for chemical-vapor-deposition (CVD) grown graphene. The Dirac point of graphene can be tuned significantly by spin-coating o-MeO-DMBI solutions on the graphene sheets at different concentrations. The transport of graphene can be changed from p-type to ambipolar and finally n-type. The electron transfer between o-MeO-DMBI and graphene was additionally confirmed by Raman imaging and photoemission spectroscopy (PES) measurements. Finally, we fabricated a complementary inverter via inkjet printing patterning of o-MeO-DMBI solutions on graphene to demonstrate the potential of o-MeO-DMBI n-type doping on graphene for future applications in electrical devices.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

Benzimidazoles / chemistry*
Graphite / chemistry*
Molecular Structure
Solutions
Volatilization

Substances

Benzimidazoles
Solutions
Graphite