Graded doping for enhanced colloidal quantum dot photovoltaics

Zhijun Ning; David Zhitomirsky; Valerio Adinolfi; Brandon Sutherland; Jixian Xu; Oleksandr Voznyy; Pouya Maraghechi; Xinzheng Lan; Sjoerd Hoogland; Yuan Ren; Edward H Sargent

doi:10.1002/adma.201204502

Graded doping for enhanced colloidal quantum dot photovoltaics

Adv Mater. 2013 Mar 25;25(12):1719-23. doi: 10.1002/adma.201204502. Epub 2013 Feb 5.

Authors

Zhijun Ning¹, David Zhitomirsky, Valerio Adinolfi, Brandon Sutherland, Jixian Xu, Oleksandr Voznyy, Pouya Maraghechi, Xinzheng Lan, Sjoerd Hoogland, Yuan Ren, Edward H Sargent

Affiliation

¹ Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada.

PMID: 23381974
DOI: 10.1002/adma.201204502

Abstract

A novel approach to improving all-inorganic colloidal quantum dot (CQD) homojunction solar cells by engineering the doping spatial profile to produce a doping gradient within the n-type absorber is presented. The doping gradient greatly improves carrier collection and enhances the voltages attainable by the device, leading to a 1 power point power conversion efficiency (PCE) improvement over previous inorganic CQD solar cells.

Publication types

Research Support, Non-U.S. Gov't