A strategy of using structurally matched alumina insulation to produce lateral electrodes on semiconductor nanowires is presented. Nanowires in the architecture are structurally matched with alumina insulation using selective anodic oxidation. Lateral electrodes are fabricated by directly evaporating metallic atoms onto the opposite sides of the nanowires. The integrated architecture with lateral electrodes propels carriers to transport them across nanowires and is crucially beneficial to the injection/extraction in optoelectronics. The matched architecture and the insulating properties of the alumina layer are investigated experimentally. ZnO nanowires are functionalized into an ultraviolet photodiode as an example. The present strategy successfully implements an advantageous architecture and is significant in developing diverse semiconductor nanowires in optoelectronic applications.