The applications of ferroelectric thin films such as the sensitivity of nonvolatile ferroelectric random access memories are closely linked with large remnant polarization. The high-T(C) (1-x)Bi(Zn(1/2)Zr(1/2))O(3)-xPbTiO(3) (x = 0.7-0.9) thin films with high (100) orientation were fabricated on Pt(111)/Ti/SiO(2)/Si substrates via a sol-gel method. The thin films could be crystallized well in a phase-pure perovskite structure. The electrical properties of the sol-gel-derived BZZ-PT thin films were investigated. A large remanent polarization with 2P(r) up to 110 μC cm(-2) and a small leakage current of 3.8 × 10(-7) A cm(-2) under an electric field of 150 kV cm(-1) are observed on the 0.2BZZ-0.8PT thin films. Furthermore, a relatively stable polarization fatigue property was achieved, indicating a potential application in high-temperature ferroelectric devices.