Direct writing of electronic devices on graphene oxide by catalytic scanning probe lithography

Kun Zhang; Qiang Fu; Nan Pan; Xinxin Yu; Jinyang Liu; Yi Luo; Xiaoping Wang; Jinlong Yang; Jianguo Hou

doi:10.1038/ncomms2200

Direct writing of electronic devices on graphene oxide by catalytic scanning probe lithography

Nat Commun. 2012:3:1194. doi: 10.1038/ncomms2200.

Authors

Kun Zhang¹, Qiang Fu, Nan Pan, Xinxin Yu, Jinyang Liu, Yi Luo, Xiaoping Wang, Jinlong Yang, Jianguo Hou

Affiliation

¹ Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.

Abstract

Reduction of graphene oxide at the nanoscale is an attractive approach to graphene-based electronics. Here we use a platinum-coated atomic force microscope tip to locally catalyse the reduction of insulating graphene oxide in the presence of hydrogen. Nanoribbons with widths ranging from 20 to 80 nm and conductivities of >10(4) S m(-1) are successfully generated, and a field effect transistor is produced. The method involves mild operating conditions, and uses arbitrary substrates, atmospheric pressure and low temperatures (≤115 °C).

Publication types

Research Support, Non-U.S. Gov't