Spin-flop switching and memory in a molecular conductor

J Am Chem Soc. 2012 Oct 24;134(42):17452-5. doi: 10.1021/ja308471u. Epub 2012 Oct 11.

Abstract

We report the first observation of spin-flop-induced sharp positive magnetoresistance as large as 100% and nonvolatile magnetoresistive memory in a π-d hybrid molecular conductor, (DIETSe)(2)FeCl(4) [DIETSe = diiode(ethylenedithio)tetraselenafulvalene]. The unprecedented magnetotransport phenomena originate from the coexistence of the spin density wave (SDW) of the quasi-one-dimensional (Q1D) π electrons and the antiferromagnetic order of d-electron spins, indicating the interplay between the electronic instability of Q1D π electrons and local moments of antiferromagnetic d-electron spins. These findings offer new possibilities in molecular electronics/spintronics.