High performance ambipolar field-effect transistor of random network carbon nanotubes

Abstract

Ambipolar field-effect transistors of random network carbon nanotubes are fabricated from an enriched dispersion utilizing a conjugated polymer as the selective purifying medium. The devices exhibit high mobility values for both holes and electrons (3 cm(2) /V·s) with a high on/off ratio (10(6) ). The performance demonstrates the effectiveness of this process to purify semiconducting nanotubes and to remove the residual polymer.