High-hole-mobility field-effect transistors based on co-benzobisthiadiazole-quaterthiophene

Jian Fan; Jonathan D Yuen; Weibin Cui; Jason Seifter; Ali Reza Mohebbi; Mingfeng Wang; Huiqiong Zhou; Alan Heeger; Fred Wudl

doi:10.1002/adma.201202195

High-hole-mobility field-effect transistors based on co-benzobisthiadiazole-quaterthiophene

Adv Mater. 2012 Dec 4;24(46):6164-8. doi: 10.1002/adma.201202195. Epub 2012 Sep 10.

Authors

Jian Fan¹, Jonathan D Yuen, Weibin Cui, Jason Seifter, Ali Reza Mohebbi, Mingfeng Wang, Huiqiong Zhou, Alan Heeger, Fred Wudl

Affiliation

¹ Center for Energy Efficient Materials, University of California, Santa Barbara, CA 93106, USA.

PMID: 22961863
DOI: 10.1002/adma.201202195

Abstract

High-mobility organic thin film transistors based on a benzobisthiadiazole-containing polymer are presented together with their morphological and optical properties. A very tight packing pattern of "edge-on" orientated polymer chains is observed in their thin films after annealing, and the hole mobility of this polymer is up to 2.5 cm(2) V(-1) s(-1) .

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

Microscopy, Atomic Force
Polymers / chemical synthesis
Polymers / chemistry
Spectrophotometry
Thiadiazoles / chemistry*
Thiophenes / chemistry*
Transistors, Electronic*

Substances

Polymers
Thiadiazoles
Thiophenes