Passively Q-switched microchip Er, Yb:YAl3(BO3)4 diode-pumped laser

V E Kisel; K N Gorbachenya; A S Yasukevich; A M Ivashko; N V Kuleshov; V V Maltsev; N I Leonyuk

doi:10.1364/OL.37.002745

Passively Q-switched microchip Er, Yb:YAl3(BO3)4 diode-pumped laser

Opt Lett. 2012 Jul 1;37(13):2745-7. doi: 10.1364/OL.37.002745.

Authors

V E Kisel¹, K N Gorbachenya, A S Yasukevich, A M Ivashko, N V Kuleshov, V V Maltsev, N I Leonyuk

Affiliation

¹ Center for Optical Materials and Technologies, Belarusian National Technical University, 65 Nezavisimosti Avenue, Building 17, Minsk, Belarus. VEKisel@bntu.by

PMID: 22743515
DOI: 10.1364/OL.37.002745

Abstract

We report, for the first time to our knowledge, a diode-pumped cw and passively Q-switched microchip Er, Yb:YAl(3)(BO(3))(4) laser. A maximal output power of 800 mW at 1602 nm in the cw regime was obtained at an absorbed pump power of 7.7 W. By using Co(2+):MgAl(2)O(4) as a saturable absorber, a TEM(00)-mode Q-switched average output power of 315 mW was demonstrated at 1522 nm, with pulse duration of 5 ns and pulse energy of 5.25 μJ at a repetition rate of 60 kHz.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Absorption
Lasers, Solid-State*
Microtechnology / methods*
Spectrum Analysis
Temperature