Dielectric-constant-enhanced hall mobility in complex oxides

Adv Mater. 2012 Aug 2;24(29):3965-9. doi: 10.1002/adma.201104665. Epub 2012 Jun 21.

Abstract

The high dielectric constant of doped ferroelectric KTa(1-x)Nb(x)O(3) is shown to increase dielectric screening of electron scatterers, and thus to enhance the electronic mobility, overcoming one of the key limitations in the application of functional oxides. These observations are based on transport and optical measurements as well as band structure calculations.

Publication types

  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Electronics*
  • Electrons
  • Magnetics
  • Oxides / chemistry*
  • Temperature

Substances

  • Oxides