Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM

Qi Liu; Jun Sun; Hangbing Lv; Shibing Long; Kuibo Yin; Neng Wan; Yingtao Li; Litao Sun; Ming Liu

doi:10.1002/adma.201104104

Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM

Adv Mater. 2012 Apr 10;24(14):1844-9. doi: 10.1002/adma.201104104. Epub 2012 Mar 7.

Authors

Qi Liu¹, Jun Sun, Hangbing Lv, Shibing Long, Kuibo Yin, Neng Wan, Yingtao Li, Litao Sun, Ming Liu

Affiliation

¹ Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.

PMID: 22407902
DOI: 10.1002/adma.201104104

Abstract

Evolution of growth/dissolution conductive filaments (CFs) in oxide-electrolyte-based resistive switching memories are studied by in situ transmission electron microscopy. Contrary to what is commonly believed, CFs are found to start growing from the anode (Ag or Cu) rather than having to reach the cathode (Pt) and grow backwards. A new mechanism based on local redox reactions inside the oxide-electrolyte is proposed.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Copper / chemistry
Electrodes
Electrolytes / chemistry*
Oxides / chemistry*
Platinum / chemistry
Semiconductors*
Silver / chemistry

Substances

Electrolytes
Oxides
Silver
Platinum
Copper