Reduced contact resistance in inkjet printed high-performance amorphous indium gallium zinc oxide transistors

Jonathan W Hennek; Yu Xia; Ken Everaerts; Mark C Hersam; Antonio Facchetti; Tobin J Marks

doi:10.1021/am201776p

Reduced contact resistance in inkjet printed high-performance amorphous indium gallium zinc oxide transistors

ACS Appl Mater Interfaces. 2012 Mar;4(3):1614-9. doi: 10.1021/am201776p. Epub 2012 Feb 24.

Authors

Jonathan W Hennek¹, Yu Xia, Ken Everaerts, Mark C Hersam, Antonio Facchetti, Tobin J Marks

Affiliation

¹ Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA.

PMID: 22321212
DOI: 10.1021/am201776p

Abstract

Solution processing of amorphous metal oxide materials to fabricate thin-film transistors (TFTs) has received great recent interest. We demonstrate here an optimized "ink" and printing process for inkjet patterning of amorphous indium gallium zinc oxide (a-IGZO) TFTs and investigate the effects of device structure on derived electron mobility. Bottom-gate top-contact (BGTC) TFTs are fabricated and shown to exhibit electron mobilities comparable to a-Si:H. Furthermore, a record electron mobility of 2.5 cm(2) V(-1) s(-1) is demonstrated for bottom-gate bottom-contact (BGBC) TFTs. The mechanism underlying such impressive performance is investigated using transmission line techniques, and it is shown that the semiconductor-source/drain electrode interface contact resistance is nearly an order of magnitude lower for BGBC transistors versus BGTC devices.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.