Large lateral photovoltaic effect in metal-(oxide-) semiconductor structures

Chongqi Yu; Hui Wang

doi:10.3390/s101110155

Large lateral photovoltaic effect in metal-(oxide-) semiconductor structures

Sensors (Basel). 2010;10(11):10155-80. doi: 10.3390/s101110155. Epub 2010 Nov 11.

Authors

Chongqi Yu¹, Hui Wang

Affiliation

¹ Department of Physics, The State Key Laboratory on Fiber Optic Local Area Communication Networks and Advanced Optical Communication Systems, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China.

Abstract

The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structures.

Keywords: 73.40.Ns; 73.40.Qv; PACS 72.40.+w; lateral phtotvoltaic effect (LPE); metal-oxide-semiconductor (MOS); metal-semiconductor (MS).

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Equipment Design
Oxides / chemistry*
Photochemistry / methods
Semiconductors*

Substances

Oxides