Simple fabrication process and extraction procedure to determine the fracture strain of monocrystalline silicon are demonstrated. Nanowires/nanoribbons in silicon are fabricated and subjected to uniaxial tensile stress along the complete length of the beams. Large strains up to 5% are measured for nanowires presenting a cross section of 50 nm × 50 nm and a length of 2.5 μm. An increase in fracture strain for silicon nanowires (NWs) with the downscaling of their volume is observed, highlighting the reduction of the defects probability as volume is decreased.
© 2011 American Institute of Physics