Selective growth of α-sexithiophene by using silicon oxides patterns

Int J Mol Sci. 2011;12(9):5719-35. doi: 10.3390/ijms12095719. Epub 2011 Sep 6.

Abstract

A process for fabricating ordered organic films on large area is presented. The process allows growing sexithiophene ultra-thin films at precise locations on patterned Si/SiO(x) substrates by driving the orientation of growth. This process combines the parallel local anodic oxidation of Si/SiO(x) substrates with the selective arrangement of molecular ultra-thin film. The former is used to fabricate silicon oxide arrays of parallel lines of 400 nm in width over an area of 1 cm(2). Selective growth arises from the interplay between kinetic growth parameters and preferential interactions with the patterned surface. The result is an ultra-thin film of organic molecules that is conformal to the features of the fabricated motives.

Keywords: annealing; atomic force microscopy; pattern; sexithiophene; template.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Crystallography, X-Ray
  • Electric Stimulation
  • Heterocyclic Compounds, 4 or More Rings / chemistry*
  • Microscopy, Atomic Force
  • Nanostructures / chemistry*
  • Oxidation-Reduction
  • Oxides / chemistry*
  • Scattering, Small Angle
  • Silicon Compounds / chemistry*
  • Surface Properties
  • Thermodynamics
  • Thiophenes / chemistry*
  • X-Ray Diffraction

Substances

  • Heterocyclic Compounds, 4 or More Rings
  • Oxides
  • Silicon Compounds
  • Thiophenes
  • sexithiophene