Anomalous Hall effect and electron transport in ferromagnetic MnBi films

P Kharel; D J Sellmyer

doi:10.1088/0953-8984/23/42/426001

Anomalous Hall effect and electron transport in ferromagnetic MnBi films

J Phys Condens Matter. 2011 Oct 26;23(42):426001. doi: 10.1088/0953-8984/23/42/426001. Epub 2011 Oct 3.

Authors

P Kharel¹, D J Sellmyer

Affiliation

¹ Nebraska Center for Materials and Nanoscience and Department of Physics and Astronomy, University of Nebraska, Lincoln, NE 68588, USA. pkharel2@unl.edu

PMID: 21969233
DOI: 10.1088/0953-8984/23/42/426001

Abstract

The electron transport properties of highly c-axis oriented MnBi thin films of various thicknesses have been investigated. Samples are metallic but the low temperature resistivity shows an unusual T(3) dependence. Transverse Hall effect measurements show that both the ordinary and anomalous Hall coefficients decrease with decreasing temperature below 300 K, but the ordinary Hall coefficient (R(0)) undergoes a sign reversal around 105 K, where the magnetic anisotropy also changes sign. Analysis of the Hall data for various samples shows that the anomalous Hall coefficient (R(s)) exhibits a strong ρ(2) dependence, where ρ is the longitudinal resistivity.

Publication types

Research Support, U.S. Gov't, Non-P.H.S.