Chemical properties of epitaxially grown bimetallic layers may deviate substantially from the behavior of their constituents. Strain in conjunction with electronic effects due to the nearby interface represent the dominant contribution to this modification. One of the simplest surface processes to characterize reactivity of these substrates is the dissociative adsorption of an incoming homo-nuclear diatomic molecule. In this study, the adsorption of O(2) on various epitaxially grown Pt films on Ru(0001) has been investigated using infrared absorption spectroscopy and thermal desorption spectroscopy. Pt/Ru(0001) has been chosen as a model system to analyze the individual influences of lateral strain and of the residual substrate interaction on the energetics of a dissociative adsorption system. It is found that adsorption and dissociative sticking depends dramatically on Pt film thickness. Even though oxygen adsorption proceeds in a straightforward manner on Pt(111) and Ru(0001), molecular chemisorption of oxygen on Pt/Ru(0001) is entirely suppressed for the Pt/Ru(0001) monolayer. For two Pt layers chemisorbed molecular oxygen on Pt terraces is produced, albeit at a very slow rate; however, no (thermally induced) dissociation occurs. Only for Pt layer thicknesses N(Pt) ≥ 3 sticking gradually speeds up and annealing leads to dissociation of O(2), thereby approaching the behavior for oxygen adsorption on genuine Pt(111). For Pt monolayer films a novel state of chemisorbed O(2), most likely located at step edges of Pt monolayer islands is identified. This state is readily populated which precludes an activation barrier towards adsorption, in contrast to adsorption on terrace sites of the Pt/Ru(0001) monolayer.