Fabrication of nanometer-scale carbon nanotube field-effect transistors on flexible and transparent substrate

Tae-Geun Kim; Jongseung Hwang; Jeongmin Kang; Sangsig Kim; SungWoo Hwang

doi:10.1166/jnn.2011.3386

Fabrication of nanometer-scale carbon nanotube field-effect transistors on flexible and transparent substrate

J Nanosci Nanotechnol. 2011 Feb;11(2):1393-6. doi: 10.1166/jnn.2011.3386.

Authors

Tae-Geun Kim¹, Jongseung Hwang, Jeongmin Kang, Sangsig Kim, SungWoo Hwang

Affiliation

¹ Research Center for Time-Domain Nano-Functional Devices, Korea University, Seoul 136-701, Korea.

PMID: 21456196
DOI: 10.1166/jnn.2011.3386

Abstract

We have successfully fabricated nanometer-scale carbon nanotube field effect transistors (CNT FETs) on a flexible and transparent substrate by electron-beam lithography. The measured current-voltage data show good hole conduction FET characteristics, and the on/off ratio of the current is more than 10(2). The conductance (as well as current) systematically decreases with the increase of the strain, suggesting that the bending of the substrate still affects the deformation condition of the short channel CNT FETs.