After a laser annealing experiment on Si wafer, we found an asymmetric sheet resistance on the surface of the wafer. Periodic nano-strip grating lines (nano-SGLs) were self-organized along the trace of one-time scanning of the continuous wave (CW) laser. Depending on laser power, the nano-trench formed with a period ranging from 500 to 800 nm with a flat trough between trench structures. This simple method of combining the scanning laser with high scanning speed of 300 m min(-1) promises a large area of nanostructure fabrication with a high output. As a demonstration of the versatile method, concentric circles were drawn on silicon substrate rotated by a personal computer (PC) cooling fan. Even with such a simple system, the nano-SGL showed iridescence from the concentric circles.