A field effect transistor (FET)-based immunosensor for detection of HbA1c and Hb

Biomed Microdevices. 2011 Apr;13(2):345-52. doi: 10.1007/s10544-010-9498-y.

Abstract

A field effect transistor (FET)-based immunosensor was developed for diabetes monitoring by detecting the concentrations of glycated hemoglobin (HbA1c) and hemoglobin (Hb). This immunosensor consists of a FET-based sensor chip and a disposable extended-gate electrode chip. The sensor chip was fabricated by standard CMOS process and was integrated with signal readout circuit. The disposable electrode chip, fabricated on polyester plastic board by Micro-Electro-Mechanical-Systems (MEMS) technique, was integrated with electrodes array and micro reaction pool. Biomolecules were immobilized on the electrode based on self-assembled monolayer and gold nanoparticles. Experimental results showed that the immunosensor achieved a linear response to HbA1c with the concentration from 4 to 24 μg/ml, and a linear response to Hb with the concentration from 60 to 180 μg/ml.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Animals
  • Antibodies / immunology
  • Biosensing Techniques / instrumentation*
  • Cattle
  • Dielectric Spectroscopy
  • Disposable Equipment
  • Electrochemistry
  • Electrodes
  • Glycated Hemoglobin / analysis*
  • Glycated Hemoglobin / chemistry
  • Glycated Hemoglobin / immunology
  • Gold / chemistry
  • Immobilized Proteins / chemistry
  • Immunoassay / instrumentation*
  • Platinum / chemistry
  • Serum Albumin, Bovine / chemistry
  • Transistors, Electronic*

Substances

  • Antibodies
  • Glycated Hemoglobin A
  • Immobilized Proteins
  • Serum Albumin, Bovine
  • Platinum
  • Gold