Air-stable solution-processed hybrid transistors with hole and electron mobilities exceeding 2 cm2 V-1 s-1

Adv Mater. 2010 Aug 24;22(32):3598-602. doi: 10.1002/adma.201000195.

Authors

Jeremy Smith¹, Aneeqa Bashir, George Adamopoulos, John E Anthony, Donal D C Bradley, Martin Heeney, Iain McCulloch, Thomas D Anthopoulos

Affiliation

¹ Department of Physics and Centre for Plastic Electronics, Blackett Laboratory Imperial College London, London, SW7 2AZ, UK.

PMID: 20665561
DOI: 10.1002/adma.201000195

No abstract available

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Air
Equipment Design
Phase Transition
Polymers / chemistry*
Solutions / chemistry
Transistors, Electronic*
Zinc Oxide / chemistry*

Substances

Polymers
Solutions
Zinc Oxide