Thin films of Se(x)Ge(1-x) have been used as optical recording media for x values of 0.33, 0.5, and 0.67. An investigation of the effect of hydrogen implantation into thin films of this material on optical recording parameters has been performed in the range from 10(14) to 10(16) ions/cm(2). Parameters such as writing energy and contrast ratio were mainly studied. Pulsed holography was also achieved.